Static behaviour of thin-film position-sensitive detectors based on p-i-n a-Si: H devices

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Abstract

The aim of this work is to provide the basis for the interpretation of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSDs) under steady state, through an analytical model. The experimental data recorded in 1D TFPSD devices with different characteristics are compared with the predicted curves and the obtained correlations are discussed.

Original languageEnglish
Pages (from-to)143-151
Number of pages9
JournalSensors And Actuators A-Physical
Volume51
Issue number2-3
DOIs
Publication statusPublished - 1995

Keywords

  • P-i-n devices
  • Position-sensitive detectors
  • Silicon
  • Thin films

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