Abstract
The aim of this work is to present a model to interpret the static and the dynamic detection and resolution limits of 1D thin film position sensitive detectors based on p-i-n a-Si:H devices. The model can determine the device characteristics that influence the spatial limits and the response time of the device.
| Original language | English |
|---|---|
| Pages (from-to) | 1202-1206 |
| Number of pages | 5 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 198-200 |
| Issue number | PART 2 |
| DOIs | |
| Publication status | Published - May 1996 |
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