Stacking-Dependent Electrical Transport in a Colloidal CdSe Nanoplatelet Thin-Film Transistor

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6 Citations (Scopus)


Here, we report an exceptional feature of the one-dimensional threadlike assemblies of a four-monolayer colloidal CdSe nanoplatelet (NPL)-based thin-film transistor. A series of different lengths of threads (200-1200 nm) was used as an active n channel in thin-film transistors (TFTs) to understand the change in mobility with the length of the threads. The film with the longest threads shows the highest conductivity of 12 S/cm and electron mobility of 14.3 cm2V-1s-1for an applied gate voltage of 2 V. The mobility trends with the length seem to be driven mostly by the lower defects in threads, where the loss of electron hopping is less. Furthermore, our results show the mobility trends in stacking-dependent CdSe NPL threads and provide a new insight into fabricating high-mobility TFTs with the use of colloidal CdSe NPLs.

Original languageEnglish
Pages (from-to)2780-2785
Number of pages6
JournalNano Letters
Issue number7
Publication statusPublished - 28 Mar 2022


  • CdSe nanoplatelets
  • Charge transport
  • mobility
  • Self-Assembly
  • Thin-film transistor


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