TY - JOUR
T1 - Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition
AU - DEE Group Author
AU - Vieira, Maria Manuela de Almeida Carvalho
PY - 2009/1/1
Y1 - 2009/1/1
N2 - This work reports on the performance and stability of bottom-gate In2O3-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In2O3 channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm(2)/V-s, along with an ON/OFF current ratio of 10(9), and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications.
AB - This work reports on the performance and stability of bottom-gate In2O3-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In2O3 channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm(2)/V-s, along with an ON/OFF current ratio of 10(9), and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications.
U2 - 10.1016/j.tsf.2009.02.108
DO - 10.1016/j.tsf.2009.02.108
M3 - Article
SN - 0040-6090
VL - 517
SP - 6341
EP - 6344
JO - Thin Solid Films
JF - Thin Solid Films
IS - 23
ER -