Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition

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Abstract

This work reports on the performance and stability of bottom-gate In2O3-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In2O3 channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm(2)/V-s, along with an ON/OFF current ratio of 10(9), and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications.
Original languageUnknown
Pages (from-to)6341-6344
JournalTHIN SOLID FILMS
Volume517
Issue number23
DOIs
Publication statusPublished - 1 Jan 2009

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