This work reports on the performance and stability of bottom-gate In2O3-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In2O3 channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm(2)/V-s, along with an ON/OFF current ratio of 10(9), and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications.
DEE Group Author, & Vieira, M. M. D. A. C. (2009). Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition. THIN SOLID FILMS, 517(23), 6341-6344. https://doi.org/10.1016/j.tsf.2009.02.108