Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility

Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1063/1.3142424

Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility

Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article

30 Citations (Scopus)

Abstract

Molybdenum doped (0-1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 degrees C by spray pyrolysis experimental technique. Films with mobility as high as similar to 149 cm(2)/V s were obtained when annealed in vacuum at 550 degrees C, which also possess carrier concentration of similar to 1x10(20) cm(-3) and resistivity as low as similar to 4.0x10(-4) Omega cm. Further, both the average visible transmittance (500-800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region.

Original language	Unknown
Pages (from-to)	nr. 212101
Journal	Applied Physics Letters
Volume	94
Issue number	21
DOIs	https://doi.org/10.1063/1.3142424
Publication status	Published - 1 Jan 2009

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10.1063/1.3142424

Cite this

Fortunato, E. M. C., & Martins, R. F. D. P. (2009). Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility. Applied Physics Letters, 94(21), nr. 212101. https://doi.org/10.1063/1.3142424

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title = "Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility",

abstract = "Molybdenum doped (0-1 at. {\%}) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 degrees C by spray pyrolysis experimental technique. Films with mobility as high as similar to 149 cm(2)/V s were obtained when annealed in vacuum at 550 degrees C, which also possess carrier concentration of similar to 1x10(20) cm(-3) and resistivity as low as similar to 4.0x10(-4) Omega cm. Further, both the average visible transmittance (500-800 nm) and the average NIR transmittance are >83{\%}. This clearly shows that the transmittance is extended well into the NIR region.",

keywords = "infrared spectra, indium compounds, molybdenum, semiconductor thin films, carrier mobility, spray coatings",

author = "Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2009",

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doi = "10.1063/1.3142424",

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volume = "94",

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journal = "Applied Physics Letters",

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T1 - Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Molybdenum doped (0-1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 degrees C by spray pyrolysis experimental technique. Films with mobility as high as similar to 149 cm(2)/V s were obtained when annealed in vacuum at 550 degrees C, which also possess carrier concentration of similar to 1x10(20) cm(-3) and resistivity as low as similar to 4.0x10(-4) Omega cm. Further, both the average visible transmittance (500-800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region.

AB - Molybdenum doped (0-1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 degrees C by spray pyrolysis experimental technique. Films with mobility as high as similar to 149 cm(2)/V s were obtained when annealed in vacuum at 550 degrees C, which also possess carrier concentration of similar to 1x10(20) cm(-3) and resistivity as low as similar to 4.0x10(-4) Omega cm. Further, both the average visible transmittance (500-800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region.

KW - infrared spectra

KW - indium compounds

KW - molybdenum

KW - semiconductor thin films

KW - carrier mobility

KW - spray coatings

U2 - 10.1063/1.3142424

DO - 10.1063/1.3142424

M3 - Article

VL - 94

SP - nr. 212101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -