Speed photodetectors based on amorphous and microcrystalline silicon p-i-n devices

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Abstract

A sensitive optical speed sensor has been developed utilizing the transient lateral photoeffect induced in a Si thin-film p-i-n photodetector by a moving light spot. The local time dependent illumination changes the lateral photocurrent and modulates the potential barrier across the junction allowing the sensing of the light spot velocity. The performances of an amorphous (a-Si:H) and a macrocrystalline (μc-Si:H) silicon-based sensor will be compared and discussed taking into account the differences in material properties and device geometry. The μc-p-i-n structure has the advantage of faster response, high current capability, and excellent stability under illumination when compared with the amorphous counterpart.

Original languageEnglish
Pages (from-to)220-222
Number of pages3
JournalAPPLIED PHYSICS LETTERS
Volume70
Issue number2
DOIs
Publication statusPublished - 13 Jan 1997

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