TY - JOUR
T1 - Spectroscopic ellipsometry study of amorphous silicon anodically oxidised
AU - Águas, Hugo Manuel Brito
AU - Gonçalves, Alexandra
AU - Pereira, Luis Miguel Nunes
AU - Silva, Rui Jorge Cordeiro
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2003/3/3
Y1 - 2003/3/3
N2 - In this work, spectroscopic ellipsometry was used to characterise oxide films produced by anodic oxidation of amorphous silicon using an ethylene glycol (0.04 M KNO(3)) Solution. The data obtained show that the growth of the oxide is not only a function of the voltage applied, but also of the current density and of the time process. An empiric model based on a power law is proposed for the growth of the oxide using, as parameters, the voltages and the time process. The oxide produced shows porosity of approximately 12%, which can be reduced down to 6% under well-controlled growth conditions.
AB - In this work, spectroscopic ellipsometry was used to characterise oxide films produced by anodic oxidation of amorphous silicon using an ethylene glycol (0.04 M KNO(3)) Solution. The data obtained show that the growth of the oxide is not only a function of the voltage applied, but also of the current density and of the time process. An empiric model based on a power law is proposed for the growth of the oxide using, as parameters, the voltages and the time process. The oxide produced shows porosity of approximately 12%, which can be reduced down to 6% under well-controlled growth conditions.
KW - amorphous silicon
KW - spectroscopic ellipsometry
KW - anodic oxidation
U2 - 10.1016/S0040-6090(02)01220-8
DO - 10.1016/S0040-6090(02)01220-8
M3 - Article
SN - 0040-6090
VL - 427
SP - 345
EP - 349
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -