Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors

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17 Citations (Scopus)

Abstract

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 106, threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm2/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Original languageEnglish
Pages (from-to)638-646
Number of pages9
JournalAcs Applied Materials & Interfaces
Volume7
Issue number1
DOIs
Publication statusPublished - 14 Jan 2015

Fingerprint

Zinc Oxide
Gallium
Indium
Zinc oxide
Electrolytes
Transistors
Nanoparticles
Cellulose derivatives
Flexible electronics
Styrene
Semiconductor devices
Cost effectiveness
Field effect transistors
Dispersions
Threshold voltage
Ink
Acrylics
Esters
Lithium
Doping (additives)

Keywords

  • electric double layer
  • electrochemical
  • electrolyte-gated transistor
  • GIZO nanoparticles
  • solvothermal synthesis

Cite this

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title = "Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors",
abstract = "Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 106, threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm2/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.",
keywords = "electric double layer, electrochemical, electrolyte-gated transistor, GIZO nanoparticles, solvothermal synthesis",
author = "L{\'i}dia Santos and Gomes, {Daniela da Silva Nunes} and Tom{\'a}s Calmeiro and Rita Branquinho and Daniela Salgueiro and Pedro Barquinha and Lu{\'i}s Pereira and Rodrigo Martins and Elvira Fortunato",
note = "This work was funded by the Portuguese Science Foundation (FCT-MEC) through project EXCL/CTM-NAN/0201/2012, Strategic Project PEst-C/CTM/LA0025/2013-14, {"}POINTS{"} FP7-NMP-263042, {"}i-FLEXIS{"} FP7-ICT-611070 and the FCT-MEC doctoral grant SFRH/BD/73810/2010 given to L. Santos. Moreover, this work was also supported by E. Fortunato's ERC 2008 Advanced Grant (INVISIBLE Contract 228144). The authors acknowledge Dr. Pawel Wojcik from CENIMAT/I3N for the design of the mechanical masks used in this work, Prof. P. Carvalho from Instituto Superior Tecnico of Universidade de Lisboa for the TEM analysis, and Resiquimica for the polymers supply.",
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T1 - Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors

AU - Santos, Lídia

AU - Gomes, Daniela da Silva Nunes

AU - Calmeiro, Tomás

AU - Branquinho, Rita

AU - Salgueiro, Daniela

AU - Barquinha, Pedro

AU - Pereira, Luís

AU - Martins, Rodrigo

AU - Fortunato, Elvira

N1 - This work was funded by the Portuguese Science Foundation (FCT-MEC) through project EXCL/CTM-NAN/0201/2012, Strategic Project PEst-C/CTM/LA0025/2013-14, "POINTS" FP7-NMP-263042, "i-FLEXIS" FP7-ICT-611070 and the FCT-MEC doctoral grant SFRH/BD/73810/2010 given to L. Santos. Moreover, this work was also supported by E. Fortunato's ERC 2008 Advanced Grant (INVISIBLE Contract 228144). The authors acknowledge Dr. Pawel Wojcik from CENIMAT/I3N for the design of the mechanical masks used in this work, Prof. P. Carvalho from Instituto Superior Tecnico of Universidade de Lisboa for the TEM analysis, and Resiquimica for the polymers supply.

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Y1 - 2015/1/14

N2 - Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 106, threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm2/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

AB - Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 106, threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm2/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

KW - electric double layer

KW - electrochemical

KW - electrolyte-gated transistor

KW - GIZO nanoparticles

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SN - 1944-8244

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