Solution-Processed Alkaline Lithium Oxide Dielectrics for Applications in n- and p-Type Thin-Film Transistors

Ao Liu, Guoxia Liu, Chundan Zhu, Huihui Zhu, Elvira Fortunato, Rodrigo Martins, Fukai Shan

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

High-k alkaline lithium oxide (LiOx) thin films are fabricated by spin-coating method. The LiOx thin films are annealed at different temperatures and characterized by various techniques. An optimized LiOx dielectric is achieved at an annealing temperature of 300 °C and exhibits wide bandgap of ≈5.5 eV, smooth surface, relatively permittivity of ≈6.7, and low leakage current density. The as-fabricated LiOx thin films are integrated, as gate dielectrics, in both n-channel indium oxide (In2O3) and p-channel cupric oxide (CuO) transistors. The optimized In2O3/LiOx thin-film transistor (TFT) exhibits high performance and high stability, such as Ion/Ioff of 107, electron mobility of 5.69 cm2 V−1 s−1, subthreshold swing of 70 mV dec−1, negligible hysteresis, and threshold voltage shift of 0.1 V under bias stress for 1.5 h. Meanwhile, the p-channel CuO TFT based on LiOx dielectric shows high Ion/Ioff of 105 and hole mobility of 1.72 cm2 V−1 s−1. All the electrical performances are achieved at an ultra-low operating voltage of 2 V. Considering the simple procedure, the moderate annealing temperature, and the low power consumption merits, these outstanding characteristics represent a significant advance toward the development of battery compatible and portable electronics.

Original languageEnglish
Article number1600140
JournalAdvanced Electronic Materials
Volume2
Issue number9
DOIs
Publication statusPublished - 1 Sep 2016

Keywords

  • high-k dielectrics
  • low operation voltage
  • low-temperature solution processing
  • p-type cupric oxides
  • thin-film transistors

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