TY - JOUR
T1 - Solution Combustion Synthesis
T2 - Low-Temperature Processing for p-Type Cu:NiO Thin Films for Transparent Electronics
AU - Liu, Ao
AU - Zhu, Huihui
AU - Guo, Zidong
AU - Meng, You
AU - Liu, Guoxia
AU - Fortunato, Elvira
AU - Martins, Rodrigo
AU - Shan, Fukai
PY - 2017/9/13
Y1 - 2017/9/13
N2 - Low-temperature solution processing opens a new window for the fabrication of oxide semiconductors due to its simple, low cost, and large-area uniformity. Herein, by using solution combustion synthesis (SCS), p-type Cu-doped NiO (Cu:NiO) thin films are fabricated at a temperature lower than 150 °C. The light doping of Cu substitutes the Ni site and disperses the valence band of the NiO matrix, leading to an enhanced p-type conductivity. Their integration into thin-film transistors (TFTs) demonstrates typical p-type semiconducting behavior. The optimized Cu5%NiO TFT exhibits outstanding electrical performance with a hole mobility of 1.5 cm2 V−1 s−1, a large on/off current ratio of ≈104, and clear switching characteristics under dynamic measurements. The employment of a high-k ZrO2 gate dielectric enables a low operating voltage (≤2 V) of the TFTs, which is critical for portable and battery-driven devices. The construction of a light-emitting-diode driving circuit demonstrates the high current control capability of the resultant TFTs. The achievement of the low-temperature-processed Cu:NiO thin films via SCS not only provides a feasible approach for low-cost flexible p-type oxide electronics but also represents a significant step toward the development of complementary metal–oxide semiconductor circuits.
AB - Low-temperature solution processing opens a new window for the fabrication of oxide semiconductors due to its simple, low cost, and large-area uniformity. Herein, by using solution combustion synthesis (SCS), p-type Cu-doped NiO (Cu:NiO) thin films are fabricated at a temperature lower than 150 °C. The light doping of Cu substitutes the Ni site and disperses the valence band of the NiO matrix, leading to an enhanced p-type conductivity. Their integration into thin-film transistors (TFTs) demonstrates typical p-type semiconducting behavior. The optimized Cu5%NiO TFT exhibits outstanding electrical performance with a hole mobility of 1.5 cm2 V−1 s−1, a large on/off current ratio of ≈104, and clear switching characteristics under dynamic measurements. The employment of a high-k ZrO2 gate dielectric enables a low operating voltage (≤2 V) of the TFTs, which is critical for portable and battery-driven devices. The construction of a light-emitting-diode driving circuit demonstrates the high current control capability of the resultant TFTs. The achievement of the low-temperature-processed Cu:NiO thin films via SCS not only provides a feasible approach for low-cost flexible p-type oxide electronics but also represents a significant step toward the development of complementary metal–oxide semiconductor circuits.
KW - low-temperature processing
KW - low-voltage operation
KW - p-type oxide semiconductor
KW - solution combustion synthesis
KW - thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=85022195943&partnerID=8YFLogxK
U2 - 10.1002/adma.201701599
DO - 10.1002/adma.201701599
M3 - Article
AN - SCOPUS:85022195943
SN - 0935-9648
VL - 29
JO - Advanced Materials
JF - Advanced Materials
IS - 34
M1 - 1701599
ER -