Sol-gel processed p-type CuAlO 2 semiconductor thin films and the integration in transistors

Chunfeng Wang, Haotian Zhu, You Meng, Shengbin Nie, Yuna Zhao, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan, Guoxia Liu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Recently, p-type metal-oxide-semiconductors have attracted considerable interests for the applications in optoelectronic devices and low-power complementary metal-oxide-semiconductor circuits. In this report, ternary p-type CuAl x O y semiconductor thin films were fabricated by sol-gel method and integrated as channel layers in thin-film transistors (TFTs). The electrical performances of CuAl x O y TFTs, together with the characteristics of CuAl x O y thin films (e.g., crystalline phases, chemical compositions, surface morphology, and optical transmittances), were systematically studied at various annealing temperatures (T a ). The phase-pure CuAlO 2 thin films were obtained at T a above 800 °C in N 2 atmosphere. CuAlO 2 TFTs annealed at 900 °C based on high-k Al 2 O 3 exhibited optimized electrical performance, including a hole mobility of 1.36 cm 2 /Vs and ON/OFF current ratio of ∼1 × 10 5 . This paper not only demonstrates the successful fabrication of high-quality p-type CuAlO 2 semiconductor thin film and electronic devices by sol-gel process but also provides guidelines for related ternary p-type oxide semiconductor material and device performance improvements.

Original languageEnglish
Article number8630855
Pages (from-to)1458-1463
Number of pages6
JournalIeee Transactions On Electron Devices
Volume66
Issue number3
DOIs
Publication statusPublished - 1 Mar 2019

Keywords

  • CuAlO
  • High transparency
  • P-type
  • Sol-gel process
  • Thin-film transistor (TFT)

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