SnO2 thin Film Oxides Produced by rf Sputtering for Transparent Thermoelectric Devices

M. Ferreira, J. Loureiro, A. Nogueira, A. Rodrigues, R. Martins, Isabel Maria Mercês Ferreira

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The combination of high transparency and good thermoelectric properties of SnO2 can open new field of applications for the thin film thermoelectric materials. Here we report on SnO2 thin films with transmittance above 90%, resistivity bellow 10-3Ωm and a Power Factor around 10-4 W/m.K2, for a Seebeck of -255μV/K, at room temperature. The effect of film thickness and post-deposition annealing on the thermoelectric properties were analysed. The performances of a single layer thermoelectric device are also presented.

Original languageEnglish
Title of host publicationMaterials Today
Subtitle of host publicationProceedings
PublisherElsevier Ltd
Pages647-653
Number of pages7
Volume2
DOIs
Publication statusPublished - 2015
Event12th European Conference on Thermoelectricity (ECT) - Madrid, Spain
Duration: 24 Sep 201426 Sep 2014
Conference number: 12th

Publication series

NameMaterials Today: Proceedings
PublisherElsevier Ltd
Number2
Volume2
ISSN (Print)2214-7853

Conference

Conference12th European Conference on Thermoelectricity (ECT)
Abbreviated titleECT
CountrySpain
CityMadrid
Period24/09/1426/09/14

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    Ferreira, M., Loureiro, J., Nogueira, A., Rodrigues, A., Martins, R., & Ferreira, I. M. M. (2015). SnO2 thin Film Oxides Produced by rf Sputtering for Transparent Thermoelectric Devices. In Materials Today: Proceedings (Vol. 2, pp. 647-653). (Materials Today: Proceedings; Vol. 2, No. 2). Elsevier Ltd. https://doi.org/10.1016/j.matpr.2015.05.090