Simulation of the lateral photo effect in large-area 1D a-Si: H p-i-n thin-film position-sensitive detectors

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Abstract

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages745-756
Number of pages12
Volume2397
ISBN (Print)0819417440
Publication statusPublished - 1995
EventOptoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA
Duration: 6 Feb 19959 Feb 1995

Conference

ConferenceOptoelectronic Integrated Circuit Materials, Physics, and Devices
CitySan Jose, CA, USA
Period6/02/959/02/95

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