Simulation of the lateral photo effect in large-area 1D a-Si: H p-i-n thin-film position-sensitive detectors

Rodrigo Martins; Elvira Fortunato

Simulation of the lateral photo effect in large-area 1D a-Si: H p-i-n thin-film position-sensitive detectors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	745-756
Number of pages	12
Volume	2397
ISBN (Print)	0819417440
Publication status	Published - 1995
Event	Optoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA Duration: 6 Feb 1995 → 9 Feb 1995

Conference

Conference	Optoelectronic Integrated Circuit Materials, Physics, and Devices
City	San Jose, CA, USA
Period	6/02/95 → 9/02/95

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title = "Simulation of the lateral photo effect in large-area 1D a-Si: H p-i-n thin-film position-sensitive detectors",

abstract = "The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.",

author = "Rodrigo Martins and Elvira Fortunato",

year = "1995",

language = "English",

isbn = "0819417440",

volume = "2397",

pages = "745--756",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Optoelectronic Integrated Circuit Materials, Physics, and Devices ; Conference date: 06-02-1995 Through 09-02-1995",

}

Martins, R & Fortunato, E 1995, Simulation of the lateral photo effect in large-area 1D a-Si: H p-i-n thin-film position-sensitive detectors. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2397, Society of Photo-Optical Instrumentation Engineers, pp. 745-756, Optoelectronic Integrated Circuit Materials, Physics, and Devices, San Jose, CA, USA, 6/02/95.

Simulation of the lateral photo effect in large-area 1D a-Si : H p-i-n thin-film position-sensitive detectors. / Martins, Rodrigo ; Fortunato, Elvira.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2397 Society of Photo-Optical Instrumentation Engineers, 1995. p. 745-756.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Fortunato, Elvira

PY - 1995

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N2 - The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

AB - The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

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BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

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