Abstract
The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 745-756 |
| Number of pages | 12 |
| Volume | 2397 |
| ISBN (Print) | 0819417440 |
| Publication status | Published - 1995 |
| Event | Optoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA Duration: 6 Feb 1995 → 9 Feb 1995 |
Conference
| Conference | Optoelectronic Integrated Circuit Materials, Physics, and Devices |
|---|---|
| City | San Jose, CA, USA |
| Period | 6/02/95 → 9/02/95 |