Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes

Dora Gonçalves, Miguel Fernandes, Paula Louro, Alessandro Fantoni, Manuela Vieira

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photodiodes are devices used as image sensors, reactive to polychromatic light and subsequently color detecting, and they are also used in optical communication applications. To improve these devices performance it is essential to study and control their characteristics, in fact their capacitance and spectral and transient responses. This study considers two types of diodes, an amorphous silicon pin and an amorphous silicon carbide pin, whose major characteristics are simulated, using the AFORS-HET program. The pin diode structure can be defined using contacts, interfaces and optical layers and then common measurements can be simulated by a numerical model, the AFORS-HET program. I-V, C-V characteristics, spectral response are simulated for both devices, without and under different illumination wavelengths. The results will allow a comparison between the main properties of amorphous silicon and amorphous silicon carbide diodes. We can conclude that sinusoidal frequency varies capacitance values as well as incident light wavelength. And when carbon is included in an amorphous silicon diode structure, its electrical and optical properties change.

Original languageEnglish
Title of host publicationTechnological Innovation for Collective Awareness Systems - 5th IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS2014, Proceedings
PublisherSpringer New York LLC
Pages602-609
Number of pages8
ISBN (Print)9783642547331
DOIs
Publication statusPublished - 2014
Event5th IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2014 - Costa de Caparica, Portugal
Duration: 7 Apr 20149 Apr 2014

Publication series

NameIFIP Advances in Information and Communication Technology
Volume423
ISSN (Print)1868-4238

Conference

Conference5th IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2014
CountryPortugal
CityCosta de Caparica
Period7/04/149/04/14

Keywords

  • amorphous silicon
  • background illumination
  • Photodiode

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    Gonçalves, D., Fernandes, M., Louro, P., Fantoni, A., & Vieira, M. (2014). Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes. In Technological Innovation for Collective Awareness Systems - 5th IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS2014, Proceedings (pp. 602-609). (IFIP Advances in Information and Communication Technology; Vol. 423). Springer New York LLC. https://doi.org/10.1007/978-3-642-54734-8_67