Silicon oxycarbide microcrystalline layers produced by spatial separation techniques

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Silicon oxycarbide microcrystallinc layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity. δd and optical gap, Eop) of silicon oxycarbide microcrystalline layers.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology - 1994
Pages55-60
Number of pages6
Volume336
Publication statusPublished - 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: 4 Apr 19948 Apr 1994

Conference

Conference1994 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/04/948/04/94

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