Silicon films produced by PECVD under powder formation conditions

R. Martins, H. Águas, V. Silva, I. Ferreira, A. Cabrita, E. Fortunato

Research output: Contribution to journalArticlepeer-review

Abstract

The process conditions of growing thin silicon films by plasma enhanced chemical vapour deposition (PECVD) were presented. The plasma impedance was found to monitor the powders in the PECVD systems and good quality silicon films were grown close to the plasma regime where the powders were formed. The silicon films exhibited properties which were interpreted based on a two-phase model where silicon nanostructures were embedded in a disordered network.

Original languageEnglish
Pages (from-to)21-28
Number of pages8
JournalMaterials Science Forum
Volume382
Publication statusPublished - 2001

Keywords

  • Materials and plasma processing

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