The process conditions of growing thin silicon films by plasma enhanced chemical vapour deposition (PECVD) were presented. The plasma impedance was found to monitor the powders in the PECVD systems and good quality silicon films were grown close to the plasma regime where the powders were formed. The silicon films exhibited properties which were interpreted based on a two-phase model where silicon nanostructures were embedded in a disordered network.
|Number of pages||8|
|Journal||Materials Science Forum|
|Publication status||Published - 2001|
- Materials and plasma processing