Silicon carbide photodiodes: Schottky and PINIP structures

Ana M. F. Cabrita; L. Pereira; Donatello Brida; Andreia A. S. Lopes; António J. S. Marques; I. Ferreira; E. Fortunato; R. Martins

doi:10.1016/S0169-4332(01)00531-1

Silicon carbide photodiodes: Schottky and PINIP structures

Ana M. F. Cabrita, L. Pereira, Donatello Brida, Andreia A. S. Lopes, António J. S. Marques, I. Ferreira, E. Fortunato, R. Martins

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Si_x:C_1-x:H/Al Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Si_x:C_1-x:layer that lead to the best Schottky diode performances.

Original language	English
Pages (from-to)	437-442
Number of pages	6
Journal	Applied Surface Science
Volume	184
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(01)00531-1
Publication status	Published - 12 Dec 2001

Keywords

Amorphous silicon carbide
Colour selection
Density of states
Schottky junctions

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title = "Silicon carbide photodiodes: Schottky and PINIP structures",

abstract = "This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Six:C1-x:H/Al Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Six:C1-x:layer that lead to the best Schottky diode performances.",

keywords = "Amorphous silicon carbide, Colour selection, Density of states, Schottky junctions",

author = "Cabrita, {Ana M. F.} and L. Pereira and Donatello Brida and Lopes, {Andreia A. S.} and Marques, {Ant{\'o}nio J. S.} and I. Ferreira and E. Fortunato and R. Martins",

note = "The author would like to thank “Funda{\c c}{\~a}o para a Ci{\^e}ncia e Tecnologia” for the support given through “Financiamentos Plurianuais of CENIMAT”. This work was supported by PRAXIS/P/CTM/12094/1998 Project H-Alpha Solar, under contract No. ERK&-CT-1999-00004.",

year = "2001",

month = dec,

day = "12",

doi = "10.1016/S0169-4332(01)00531-1",

language = "English",

volume = "184",

pages = "437--442",

journal = "Applied Surface Science",

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TY - JOUR

T1 - Silicon carbide photodiodes

T2 - Schottky and PINIP structures

AU - Cabrita, Ana M. F.

AU - Pereira, L.

AU - Brida, Donatello

AU - Lopes, Andreia A. S.

AU - Marques, António J. S.

AU - Ferreira, I.

AU - Fortunato, E.

AU - Martins, R.

N1 - The author would like to thank “Fundação para a Ciência e Tecnologia” for the support given through “Financiamentos Plurianuais of CENIMAT”. This work was supported by PRAXIS/P/CTM/12094/1998 Project H-Alpha Solar, under contract No. ERK&-CT-1999-00004.

PY - 2001/12/12

Y1 - 2001/12/12

N2 - This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Six:C1-x:H/Al Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Six:C1-x:layer that lead to the best Schottky diode performances.

AB - This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Six:C1-x:H/Al Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Six:C1-x:layer that lead to the best Schottky diode performances.

KW - Amorphous silicon carbide

KW - Colour selection

KW - Density of states

KW - Schottky junctions

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U2 - 10.1016/S0169-4332(01)00531-1

DO - 10.1016/S0169-4332(01)00531-1

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SN - 0169-4332

VL - 184

SP - 437

EP - 442

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Silicon carbide photodiodes: Schottky and PINIP structures

Abstract

Keywords

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