SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Ana R. X. Barros; Nuno F. Correia; Pedro M. C. Barquinha; Vitor M. L. Figueiredo; Sang Hee Park; Chi Sun Hwang; Chun Won Byun; Elvira M. C. Fortunato; Rodrigo Martins

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Ana R. X. Barros (Inventor), Nuno F. Correia (Inventor), Pedro M. C. Barquinha (Inventor), Vitor M. L. Figueiredo (Inventor), Sang Hee Park (Inventor), Chi Sun Hwang (Inventor), Chun Won Byun (Inventor), Elvira M. C. Fortunato (Inventor), Rodrigo Martins (Inventor)

Research output: Patent › International PCT application

Abstract

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

Original language	English
Patent number	US2011253997
IPC	H01L 29/ 22 A I
Priority date	15/04/10
Publication status	Published - 20 Oct 2011

Cite this

@misc{68d8d3266fd84ffda2b685597a53d91e,

title = "SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME",

abstract = "Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.",

author = "Barros, {Ana R. X.} and Correia, {Nuno F.} and Barquinha, {Pedro M. C.} and Figueiredo, {Vitor M. L.} and Park, {Sang Hee} and Hwang, {Chi Sun} and Byun, {Chun Won} and Fortunato, {Elvira M. C.} and Rodrigo Martins",

year = "2011",

month = oct,

day = "20",

language = "English",

type = "Patent",

note = "US2011253997; H01L 29/ 22 A I",

}

TY - PAT

T1 - SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

AU - Barros, Ana R. X.

AU - Correia, Nuno F.

AU - Barquinha, Pedro M. C.

AU - Figueiredo, Vitor M. L.

AU - Park, Sang Hee

AU - Hwang, Chi Sun

AU - Byun, Chun Won

AU - Fortunato, Elvira M. C.

AU - Martins, Rodrigo

PY - 2011/10/20

Y1 - 2011/10/20

N2 - Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

AB - Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

M3 - International PCT application

M1 - US2011253997

ER -

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

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