Self optical gain in multilayered silicon-carbon heterostructures: A capacitive active band-pass filter model

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper reports results on the use of a pi'n/pin a-SiC:H heterostructure as an active band-pass filter transfer function whose operation depends on the wavelength of the trigger light, on the applied voltage and on the wavelength of the additional optical bias. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. Experimental and simulated results show that the output signal has a strong nonlinear dependence on the light absorption profile. The device, modeled by a simple circuit with variable capacitors and interconnected phototransistors through a resistor, is a current-controlled device. It uses a changing capacitance to control the power delivered to the load acting as a state variable filter circuit. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages441-447
Number of pages7
Volume1321
DOIs
Publication statusPublished - 1 Jan 2012
Event2011 MRS Spring Meeting - San Francisco, United States
Duration: 25 Apr 201129 Apr 2011

Conference

Conference2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period25/04/1129/04/11

Keywords

  • Multi-layered
  • Nonlinear dependence
  • a-SiC:H
  • Active band-pass filters
  • Applied voltages
  • High-pass
  • Load acting

Fingerprint

Dive into the research topics of 'Self optical gain in multilayered silicon-carbon heterostructures: A capacitive active band-pass filter model'. Together they form a unique fingerprint.

Cite this