Selective optical sensors from 0.25 to 1.1 μm based on metal oxide-semiconductor heterojunctions

Alexander Malik, Ana Sêco, Elvira Fortunato, Rodrigo Martins

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1-xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications.

Original languageEnglish
Pages (from-to)333-337
Number of pages5
JournalSensors And Actuators A-Physical
Volume68
Issue number1 -3 pt 2
DOIs
Publication statusPublished - 1 Jan 1998
EventProceedings of the 1997 Eurosensors XI Conference. Part 2 (of 4) - Warsaw, Pol
Duration: 21 Sep 199724 Sep 1997

Keywords

  • Heterojunctions
  • Metal oxide films
  • Optical sensors
  • Semiconductors

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