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Abstract

Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 degrees C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn2SnO4 nanoparticles and ZnSnO3 nanowires with length similar to 600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO3 and Zn2SnO4, respectively, and a resistivity of 1.42 k Omega.cm for single ZnSnO3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.
Original languageEnglish
Pages (from-to)3986-3997
JournalACS APPLIED NANO MATERIALS
Volume1
Issue number8
DOIs
Publication statusPublished - Aug 2018

Keywords

  • nanostructure
  • nanowire
  • Zn2SnO4
  • ZnSnO3
  • hydrothermal synthesis
  • ZTO

Cite this

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title = "Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters",
abstract = "Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 degrees C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn2SnO4 nanoparticles and ZnSnO3 nanowires with length similar to 600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO3 and Zn2SnO4, respectively, and a resistivity of 1.42 k Omega.cm for single ZnSnO3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.",
keywords = "nanostructure, nanowire, Zn2SnO4, ZnSnO3, hydrothermal synthesis, ZTO",
author = "Ana Rovisco and Rita Branquinho and Jorge Martins and Oliveira, {Maria Jo{\~a}o} and Daniela Nunes and Elvira Fortunato and Rodrigo Martins and Pedro Barquinha",
note = "info:eu-repo/grantAgreement/FCT/5876/147333/PT# info:eu-repo/grantAgreement/EC/H2020/716510/EU# info:eu-repo/grantAgreement/EC/H2020/685758/EU# info:eu-repo/grantAgreement/EC/H2020/692373/EU# POCI-01-0145-FEDER-007688",
year = "2018",
month = "8",
doi = "10.1021/acsanm.8b00743",
language = "English",
volume = "1",
pages = "3986--3997",
journal = "ACS APPLIED NANO MATERIALS",
issn = "2574-0970",
publisher = "American Chemical Society",
number = "8",

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TY - JOUR

T1 - Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters

AU - Rovisco, Ana

AU - Branquinho, Rita

AU - Martins, Jorge

AU - Oliveira, Maria João

AU - Nunes, Daniela

AU - Fortunato, Elvira

AU - Martins, Rodrigo

AU - Barquinha, Pedro

N1 - info:eu-repo/grantAgreement/FCT/5876/147333/PT# info:eu-repo/grantAgreement/EC/H2020/716510/EU# info:eu-repo/grantAgreement/EC/H2020/685758/EU# info:eu-repo/grantAgreement/EC/H2020/692373/EU# POCI-01-0145-FEDER-007688

PY - 2018/8

Y1 - 2018/8

N2 - Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 degrees C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn2SnO4 nanoparticles and ZnSnO3 nanowires with length similar to 600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO3 and Zn2SnO4, respectively, and a resistivity of 1.42 k Omega.cm for single ZnSnO3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.

AB - Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 degrees C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn2SnO4 nanoparticles and ZnSnO3 nanowires with length similar to 600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO3 and Zn2SnO4, respectively, and a resistivity of 1.42 k Omega.cm for single ZnSnO3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.

KW - nanostructure

KW - nanowire

KW - Zn2SnO4

KW - ZnSnO3

KW - hydrothermal synthesis

KW - ZTO

U2 - 10.1021/acsanm.8b00743

DO - 10.1021/acsanm.8b00743

M3 - Article

VL - 1

SP - 3986

EP - 3997

JO - ACS APPLIED NANO MATERIALS

JF - ACS APPLIED NANO MATERIALS

SN - 2574-0970

IS - 8

ER -