TY - JOUR
T1 - Room temperature dc and ac electrical behaviour of undoped ZnO films under UV light
AU - Martins, Rodrigo Ferrão de Paiva
AU - Igreja, Rui Alberto Garção Barreira do Nascimento
AU - Ferreira, Isabel Maria Mercês
AU - Marques, A
AU - Pimentel, Ana Cláudia Madeira Botas Gomes
AU - Gonçalves, Alexandra
AU - Fortunato, Elvira Maria Correia
PY - 2005/4/25
Y1 - 2005/4/25
N2 - This paper studies the dc and ac impedance behaviour of undoped ZnO thin films produced by spray pyrolysis and rf magnetron sputtering under UV light illumination, at room temperature, emphasising the role that the crystallite size, structure, surface morphology and the state of surface have on the electrical responsivities obtained. The results achieved show that the sputtered films with crystal sizes of about 4 nm exhibit dc electrical UV responsivities of 10(8). On the other hand, the spray pyrolysis films exhibit the lowest dc responsivities, due the high crystal sizes and state of surface contamination, to which very good capacitance responses were obtained, mainly due to the degree of porosity exhibit by these films when produced at low temperatures. Based on that, a two-phase electrical model is proposed to explain the set of behaviours observed. (c) 2005 Elsevier B.V. All rights reserved.
AB - This paper studies the dc and ac impedance behaviour of undoped ZnO thin films produced by spray pyrolysis and rf magnetron sputtering under UV light illumination, at room temperature, emphasising the role that the crystallite size, structure, surface morphology and the state of surface have on the electrical responsivities obtained. The results achieved show that the sputtered films with crystal sizes of about 4 nm exhibit dc electrical UV responsivities of 10(8). On the other hand, the spray pyrolysis films exhibit the lowest dc responsivities, due the high crystal sizes and state of surface contamination, to which very good capacitance responses were obtained, mainly due to the degree of porosity exhibit by these films when produced at low temperatures. Based on that, a two-phase electrical model is proposed to explain the set of behaviours observed. (c) 2005 Elsevier B.V. All rights reserved.
KW - films
KW - UV
KW - sensors
KW - oxides
KW - oxide
KW - oxide-films
KW - ZnO
KW - nanostructured
KW - semiconductors
KW - thin
KW - Spectroscopy
KW - zinc oxide
KW - Amorphous silicon
U2 - 10.1016/j.mseb.2004.12.089
DO - 10.1016/j.mseb.2004.12.089
M3 - Article
SN - 0921-5107
VL - 118
SP - 135
EP - 140
JO - Materials Science And Engineering B-Advanced Functional Solid-State Materials
JF - Materials Science And Engineering B-Advanced Functional Solid-State Materials
IS - 1-3
ER -