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Hafnium oxide-aluminum oxide (HfAlO) dielectric films were cosputtered using HfO2 and Al2O3 targets, and their properties are studied in comparison with pure HfO2 films. The X-ray diffraction studies confirmed that the HfO2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of (HfO2)(0.86)(Al2O3)(0.14) are amorphous even after annealing at 500 degrees C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3 x 10(-10) A cm(-2) at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate.
Original languageUnknown
Pages (from-to)G65-G68
JournalElectrochemical And Solid State Letters
Issue number10
Publication statusPublished - 1 Jan 2009

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