TY - JOUR
T1 - Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics
AU - Fortunato, Elvira Maria Correia
AU - Barquinha, Pedro Miguel Cândido
AU - Martins, Rodrigo Ferrão de Paiva
AU - Pereira, Luis Miguel Nunes
PY - 2009/1/1
Y1 - 2009/1/1
N2 - Hafnium oxide-aluminum oxide (HfAlO) dielectric films were cosputtered using HfO2 and Al2O3 targets, and their properties are studied in comparison with pure HfO2 films. The X-ray diffraction studies confirmed that the HfO2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of (HfO2)(0.86)(Al2O3)(0.14) are amorphous even after annealing at 500 degrees C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3 x 10(-10) A cm(-2) at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate.
AB - Hafnium oxide-aluminum oxide (HfAlO) dielectric films were cosputtered using HfO2 and Al2O3 targets, and their properties are studied in comparison with pure HfO2 films. The X-ray diffraction studies confirmed that the HfO2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of (HfO2)(0.86)(Al2O3)(0.14) are amorphous even after annealing at 500 degrees C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3 x 10(-10) A cm(-2) at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate.
U2 - 10.1149/1.3186643
DO - 10.1149/1.3186643
M3 - Article
VL - 12
SP - G65-G68
JO - Electrochemical And Solid State Letters
JF - Electrochemical And Solid State Letters
SN - 1099-0062
IS - 10
ER -