TY - JOUR
T1 - Role of the rf frequency on the structure and composition of polymorphous silicon films
AU - Águas, Hugo Manuel Brito
AU - Raniero, Leandro
AU - Pereira, Luis Miguel Nunes
AU - Viana, Ana S.
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2004/6/15
Y1 - 2004/6/15
N2 - In this work we present results of structural composition and morphological characteristics of polymorphous silicon (pm-Si:H) films deposited by PECVD at 13.56 and 27.12 MHz. In addition, the role of the excitation frequency on the growth rate will be also analyzed. The results show that by using the 27.12 MHz excitation frequency the hydrogen dilution in the plasma needed to produce pm-Si:H can be reduced by more than 50% as well as the rf power density, leading to an increase on the growth rate to values higher than 3 Å/s. Spectroscopic ellipsometry and Raman spectroscopy show that the 27.12 MHz pm-Si:H films are more ordered than the pm-Si:H films produced at 13.56 MHz, while the infrared spectroscopy show that the SiH2 concentration in the films is strongly reduced. AFM measurements reveal that the films produced at 27.12 MHz films are more structured, presenting also higher roughness.
AB - In this work we present results of structural composition and morphological characteristics of polymorphous silicon (pm-Si:H) films deposited by PECVD at 13.56 and 27.12 MHz. In addition, the role of the excitation frequency on the growth rate will be also analyzed. The results show that by using the 27.12 MHz excitation frequency the hydrogen dilution in the plasma needed to produce pm-Si:H can be reduced by more than 50% as well as the rf power density, leading to an increase on the growth rate to values higher than 3 Å/s. Spectroscopic ellipsometry and Raman spectroscopy show that the 27.12 MHz pm-Si:H films are more ordered than the pm-Si:H films produced at 13.56 MHz, while the infrared spectroscopy show that the SiH2 concentration in the films is strongly reduced. AFM measurements reveal that the films produced at 27.12 MHz films are more structured, presenting also higher roughness.
U2 - 10.1016/j.jnoncrysol.2004.02.049
DO - 10.1016/j.jnoncrysol.2004.02.049
M3 - Article
SN - 0022-3093
VL - 338-40
SP - 183
EP - 187
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - NA
ER -