Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors

R. Martins; E. Fortunato

Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors

Research output: Contribution to journal › Article › peer-review

Abstract

The aim of this work is to present an analytical model which can to interpret the role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

Original language	English
Pages (from-to)	158-162
Number of pages	5
Journal	Thin Solid Films
Volume	337
Issue number	1-2
Publication status	Published - 11 Jan 1999

Keywords

Amorphous silicon
Devices
Position sensors
Thin films

Cite this

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title = "Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors",

abstract = "The aim of this work is to present an analytical model which can to interpret the role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.",

keywords = "Amorphous silicon, Devices, Position sensors, Thin films",

author = "R. Martins and E. Fortunato",

year = "1999",

month = jan,

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language = "English",

volume = "337",

pages = "158--162",

journal = "Thin Solid Films",

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T1 - Role of the resistive layer on the performances of 2D a-Si

T2 - H thin film position sensitive detectors

AU - Martins, R.

AU - Fortunato, E.

PY - 1999/1/11

Y1 - 1999/1/11

N2 - The aim of this work is to present an analytical model which can to interpret the role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

AB - The aim of this work is to present an analytical model which can to interpret the role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

KW - Amorphous silicon

KW - Devices

KW - Position sensors

KW - Thin films

UR - https://www.scopus.com/pages/publications/0000320596

M3 - Article

AN - SCOPUS:0000320596

SN - 0040-6090

VL - 337

SP - 158

EP - 162

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors

Abstract

Keywords

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