Abstract
The aim of this work is to present an analytical model which can to interpret the role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 158-162 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 337 |
| Issue number | 1-2 |
| Publication status | Published - 11 Jan 1999 |
Keywords
- Amorphous silicon
- Devices
- Position sensors
- Thin films