Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors

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Abstract

The aim of this work is to present an analytical model which can to interpret the role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

Original languageEnglish
Pages (from-to)158-162
Number of pages5
JournalThin Solid Films
Volume337
Issue number1-2
Publication statusPublished - 11 Jan 1999

Keywords

  • Amorphous silicon
  • Devices
  • Position sensors
  • Thin films

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