Role of the i-layer thickness in the performance of a-Si: H Schottky barrier photodiodes

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Abstract

In this work we present the current/voltage characteristics of Si:H/Pd Schottky structures using high quality, low defect density amorphous silicon (a-Si:H) deposited by a non-conventional, modified triode PECVD method. This new configuration allows the deposition of compact and high quality a-Si:H with a photosensitivity of 107, yielding films with low bulk defects. AFM measurements also revealed that these films have a very smooth surface allowing a low defect interface between the metal and the a-Si:H. As a result, we show that by using these a-Si:H films and by proper control of the i-layer thickness the reverse dark current of the diode can be highly reduced achieving signal to noise ratio of 106, surpassing the results usually achieved by p-i-n structures.

Original languageEnglish
Pages (from-to)587-590
Number of pages4
JournalBioceramics 18, Pts 1 And 2
Volume230-232
Publication statusPublished - 2002

Keywords

  • AFM
  • Amorphous Silicon
  • I-V Curves
  • MTPECVD
  • Position Sensors
  • Schottky Diodes

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