Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films

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Abstract

Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200°C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000°C and hydrogen dilution 87%, to values above 2100°C and hydrogen dilution 90%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm.

Original languageEnglish
Pages (from-to)690-696
Number of pages7
JournalApplied Surface Science
Volume144-145
Issue number0
DOIs
Publication statusPublished - Apr 1999
Event14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis - Birmingham, United Kingdom
Duration: 31 Aug 19984 Sep 1998

Keywords

  • Polycrystalline surfaces
  • Polycrystalline thin films
  • Silicon carbide

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