Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films

Isabel Ferreira; Hugo Águas; Luís Claudio Mendes; Rodrigo Martins

doi:10.1016/S0169-4332(98)00905-2

Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films

Isabel Ferreira, Hugo Águas, Luís Claudio Mendes, Rodrigo Martins

Research output: Contribution to journal › Conference article

7 Citations (Scopus)

Abstract

Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200°C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000°C and hydrogen dilution 87%, to values above 2100°C and hydrogen dilution 90%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm^-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm.

Original language	English
Pages (from-to)	690-696
Number of pages	7
Journal	Applied Surface Science
Volume	144-145
Issue number	0
DOIs	https://doi.org/10.1016/S0169-4332(98)00905-2
Publication status	Published - Apr 1999
Event	14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis - Birmingham, United Kingdom Duration: 31 Aug 1998 → 4 Sep 1998

Keywords

Polycrystalline surfaces
Polycrystalline thin films
Silicon carbide

Access to Document

10.1016/S0169-4332(98)00905-2Licence: CC BY-NC-ND

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Ferreira, I., Águas, H., Mendes, L. C., & Martins, R. (1999). Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films. Applied Surface Science, 144-145(0), 690-696. https://doi.org/10.1016/S0169-4332(98)00905-2

@article{33d18df922194fe68b7fb5fba5adcacb,

title = "Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films",

abstract = "Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200°C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000°C and hydrogen dilution 87{\%}, to values above 2100°C and hydrogen dilution 90{\%}, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm.",

keywords = "Polycrystalline surfaces, Polycrystalline thin films, Silicon carbide",

author = "Isabel Ferreira and Hugo {\'A}guas and Mendes, {Lu{\'i}s Claudio} and Rodrigo Martins",

note = "The authors would like to thank `Funda{\cc}{\~a}o para a Ci{\^e}ncia e Tecnologia' for the support given through `Financiamentos Plurianuais of CENIMAT' and the project PRAXIS/3/3.1/MMA/1788/95.",

year = "1999",

month = "4",

doi = "10.1016/S0169-4332(98)00905-2",

language = "English",

volume = "144-145",

pages = "690--696",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "0",

}

TY - JOUR

T1 - Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films

AU - Ferreira, Isabel

AU - Águas, Hugo

AU - Mendes, Luís Claudio

AU - Martins, Rodrigo

N1 - The authors would like to thank `Fundação para a Ciência e Tecnologia' for the support given through `Financiamentos Plurianuais of CENIMAT' and the project PRAXIS/3/3.1/MMA/1788/95.

PY - 1999/4

Y1 - 1999/4

N2 - Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200°C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000°C and hydrogen dilution 87%, to values above 2100°C and hydrogen dilution 90%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm.

AB - Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200°C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000°C and hydrogen dilution 87%, to values above 2100°C and hydrogen dilution 90%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm.

KW - Polycrystalline surfaces

KW - Polycrystalline thin films

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=0032647996&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(98)00905-2

DO - 10.1016/S0169-4332(98)00905-2

M3 - Conference article

AN - SCOPUS:0032647996

VL - 144-145

SP - 690

EP - 696

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 0

ER -