Abstract
Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200°C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000°C and hydrogen dilution 87%, to values above 2100°C and hydrogen dilution 90%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm.
Original language | English |
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Pages (from-to) | 690-696 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 144-145 |
Issue number | 0 |
DOIs | |
Publication status | Published - Apr 1999 |
Event | 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis - Birmingham, United Kingdom Duration: 31 Aug 1998 → 4 Sep 1998 |
Keywords
- Polycrystalline surfaces
- Polycrystalline thin films
- Silicon carbide