Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique

Isabel Maria Mercês Ferreira; A. Cabrita; Francisco Manuel Braz Fernandes; Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/S0928-4931(01)00250-8

Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique

Isabel Maria Mercês Ferreira, A. Cabrita, Francisco Manuel Braz Fernandes, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper reports results on the role of high hydrogen dilution (above 80%) on the electro-optical and structural properties of boron doped silicon films produced by hot wire chemical vapor deposition (HW-CVD) technique, keeping constant the filament temperature. The structural, compositional, morphological, electrical and optical properties achieved show that the films present excellent homogeneity over the entire 10 X 10 cm deposited area. These results were obtained for films produced at gas pressures below 66.5 Pa, in spite of the high flow rate used.

Original language	English
Pages (from-to)	141-144
Number of pages	4
Journal	MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
Volume	15
Issue number	1-2
DOIs	https://doi.org/10.1016/S0928-4931(01)00250-8
Publication status	Published - 1 Jan 2001

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Ferreira, I. M. M., Cabrita, A., Braz Fernandes, F. M., Fortunato, E. M. C., & Martins, R. F. D. P. (2001). Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 15(1-2), 141-144. https://doi.org/10.1016/S0928-4931(01)00250-8

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title = "Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique",

abstract = "This paper reports results on the role of high hydrogen dilution (above 80\%) on the electro-optical and structural properties of boron doped silicon films produced by hot wire chemical vapor deposition (HW-CVD) technique, keeping constant the filament temperature. The structural, compositional, morphological, electrical and optical properties achieved show that the films present excellent homogeneity over the entire 10 X 10 cm deposited area. These results were obtained for films produced at gas pressures below 66.5 Pa, in spite of the high flow rate used.",

keywords = "large area film properties, hot wire technique, boron-doped films",

author = "Ferreira, \{Isabel Maria Merc{\^e}s\} and A. Cabrita and \{Braz Fernandes\}, \{Francisco Manuel\} and Fortunato, \{Elvira Maria Correia\} and Martins, \{Rodrigo Ferr{\~a}o de Paiva\}",

note = "CENIMAT and PRAXIS/PICTM/12094/1998 project and H. Alpha Solar project under contract No. ERK\&CT-1999-00004",

year = "2001",

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doi = "10.1016/S0928-4931(01)00250-8",

language = "English",

volume = "15",

pages = "141--144",

journal = "MATERIALS SCIENCE \& ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS",

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Ferreira, IMM, Cabrita, A, Braz Fernandes, FM , Fortunato, EMC & Martins, RFDP 2001, 'Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique', MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, vol. 15, no. 1-2, pp. 141-144. https://doi.org/10.1016/S0928-4931(01)00250-8

Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique. / Ferreira, Isabel Maria Mercês; Cabrita, A.; Braz Fernandes, Francisco Manuel et al.
In: MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 15, No. 1-2, 01.01.2001, p. 141-144.

Research output: Contribution to journal › Article › peer-review

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T1 - Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique

AU - Ferreira, Isabel Maria Mercês

AU - Cabrita, A.

AU - Braz Fernandes, Francisco Manuel

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

N1 - CENIMAT and PRAXIS/PICTM/12094/1998 project and H. Alpha Solar project under contract No. ERK&CT-1999-00004

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AB - This paper reports results on the role of high hydrogen dilution (above 80%) on the electro-optical and structural properties of boron doped silicon films produced by hot wire chemical vapor deposition (HW-CVD) technique, keeping constant the filament temperature. The structural, compositional, morphological, electrical and optical properties achieved show that the films present excellent homogeneity over the entire 10 X 10 cm deposited area. These results were obtained for films produced at gas pressures below 66.5 Pa, in spite of the high flow rate used.

KW - large area film properties

KW - hot wire technique

KW - boron-doped films

U2 - 10.1016/S0928-4931(01)00250-8

DO - 10.1016/S0928-4931(01)00250-8

M3 - Article

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IS - 1-2

ER -

Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique

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