Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique

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Abstract

This paper reports results on the role of high hydrogen dilution (above 80%) on the electro-optical and structural properties of boron doped silicon films produced by hot wire chemical vapor deposition (HW-CVD) technique, keeping constant the filament temperature. The structural, compositional, morphological, electrical and optical properties achieved show that the films present excellent homogeneity over the entire 10 X 10 cm deposited area. These results were obtained for films produced at gas pressures below 66.5 Pa, in spite of the high flow rate used.
Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalMATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
Volume15
Issue number1-2
DOIs
Publication statusPublished - 1 Jan 2001

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