Abstract
It is known that the performances of the a-Si.H solar celIs are affected by theTransparent Conductive Oxide (TCO) fil~ deposited on the glass substrate [1]. Here, wepropose to study the role of the TCO structure on the main characteristics of amorph~ussilicon solar cells.As references, we choose two different ITOs deposited by Thermal ReactiveEvaporation, showing different surface morphologies (type A and type B).These differentsurface morphologies can be obtained by changing some deposition parameters, namely thedeposition rate and the alloy concentration. Besides that, as the ITO layer is reduced ",:henexposed to a hydrogen plasma, a protective thin SiO layer is also used to prev.ent.filrnsreduction. Preliminary studies concerning the role of the SiO layer showed a sígníficantincrease (up to 17%)on the solar celIsefficiency.AlI these data will be presented towards theimplementationof the final solar cell efficiencyand stability.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the eleventh European Communities Photovoltaic Solar Energy Conference |
| Pages | 758 |
| Number of pages | 1 |
| Publication status | Published - Oct 1992 |
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Carvalho, N., Ferreira, I., Fortunato, E. M. C., Martins, R. F. D. P., & Guimarães, L. (1992). Role of TCO layer on the performance of a-Si:H solar cells. In Proceedings of the eleventh European Communities Photovoltaic Solar Energy Conference (pp. 758)