ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION

C. Carvalho; J. M. M. de Nijs; R. Martins; L. Guimarães

ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION

C. Carvalho, J. M. M. de Nijs, R. Martins, L. Guimarães

DCM - Departamento de Ciência dos Materiais

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Original language	English
Title of host publication	AMORPHOUS SILICON TECHNOLOGY - 1991
Editors	A. Madan, Y. Hamakawa, M. J. Thompson, P. C. Taylor, P. G. Lecomber
Publisher	MRS - Materials Research Society
Pages	487-492
ISBN (Print)	1-55899-113-1
Publication status	Published - 1991
Event	Symposium at the 1991 Spring Meeting of the Materials Research Society: Amorphous Silicon Technology - Anaheim, United States Duration: 30 Apr 1991 → 1 May 1991

Publication series

Name	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Publisher	Materials Research Society
Volume	219

Conference

Conference	Symposium at the 1991 Spring Meeting of the Materials Research Society: Amorphous Silicon Technology
Country/Territory	United States
City	Anaheim
Period	30/04/91 → 1/05/91

Cite this

Carvalho, C., de Nijs, J. M. M., Martins, R., & Guimarães, L. (1991). ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION. In A. Madan, Y. Hamakawa, M. J. Thompson, P. C. Taylor, & P. G. Lecomber (Eds.), AMORPHOUS SILICON TECHNOLOGY - 1991 (pp. 487-492). (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS; Vol. 219). MRS - Materials Research Society.

@inbook{816168a6d20e452ca79255fe55ef9a5e,

title = "ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION",

author = "C. Carvalho and {de Nijs}, {J. M. M.} and R. Martins and L. Guimar{\~a}es",

year = "1991",

language = "English",

isbn = "1-55899-113-1",

series = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS",

publisher = "MRS - Materials Research Society",

pages = "487--492",

editor = "A. Madan and Y. Hamakawa and Thompson, {M. J.} and Taylor, {P. C.} and Lecomber, {P. G.}",

booktitle = "AMORPHOUS SILICON TECHNOLOGY - 1991",

address = "United States",

note = "Symposium at the 1991 Spring Meeting of the Materials Research Society: Amorphous Silicon Technology ; Conference date: 30-04-1991 Through 01-05-1991",

}

Carvalho, C, de Nijs, JMM, Martins, R & Guimarães, L 1991, ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION. in A Madan, Y Hamakawa, MJ Thompson, PC Taylor & PG Lecomber (eds), AMORPHOUS SILICON TECHNOLOGY - 1991. MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 219, MRS - Materials Research Society, pp. 487-492, Symposium at the 1991 Spring Meeting of the Materials Research Society: Amorphous Silicon Technology, Anaheim, California, United States, 30/04/91.

ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION. / Carvalho, C.; de Nijs, J. M. M.; Martins, R. et al.
AMORPHOUS SILICON TECHNOLOGY - 1991. ed. / A. Madan; Y. Hamakawa; M. J. Thompson; P. C. Taylor; P. G. Lecomber. MRS - Materials Research Society, 1991. p. 487-492 (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS; Vol. 219).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

TY - CHAP

T1 - ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION

AU - Carvalho, C.

AU - de Nijs, J. M. M.

AU - Martins, R.

AU - Guimarães, L.

PY - 1991

Y1 - 1991

M3 - Chapter

SN - 1-55899-113-1

T3 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

SP - 487

EP - 492

BT - AMORPHOUS SILICON TECHNOLOGY - 1991

A2 - Madan, A.

A2 - Hamakawa, Y.

A2 - Thompson, M. J.

A2 - Taylor, P. C.

A2 - Lecomber, P. G.

PB - MRS - Materials Research Society

T2 - Symposium at the 1991 Spring Meeting of the Materials Research Society: Amorphous Silicon Technology

Y2 - 30 April 1991 through 1 May 1991

ER -