Role of photodegradation on the μτ product and microstructure of the a-Si

H pin devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R = I2100/I2100+I2000) as well as the hydrogen content (CH) and density of states (g(Ef)) of the active i-layer were monitored throughout the entire light induced degradation process and compared with the correspondents μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Data show a strong correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces (R increases from 0.1 to 0.4) suggesting structural changes during the light induced defects' formation. For holes, the μτ product remains approximately constant and only dependent on the initial hydrogen content. As g(Ef) increases, μτ presents an asymmetrical decrease showing that electrons are more sensitive to defects' growth than holes. We also observe that the rate of degradation is faster for samples having the lowest defect densities, R and CH, showing that the amount of degradation is not a simple function of the photon exposure (Gt product) but also depends on the material microstructure.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology
EditorsEric A. Schiff, Malcolm J. Thompson, Arun Madan, Kazunobu Tanaka, Peter G. LeComber
PublisherPubl by Materials Research Society
Pages637-642
Number of pages6
Volume297
ISBN (Print)155899193X
Publication statusPublished - 1 Dec 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: 13 Apr 199316 Apr 1993

Conference

ConferenceProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA
Period13/04/9316/04/93

Fingerprint

Photodegradation
Hydrogen
Degradation
Microstructure
Defects
Electrons
Defect density
Photoconductivity
Optoelectronic devices
Solar cells
Photons

Cite this

Vieira, M., Fortunato, E., Lavareda, G., Carvalho, C. N., & Martins, R. (1993). Role of photodegradation on the μτ product and microstructure of the a-Si: H pin devices. In E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, & P. G. LeComber (Eds.), Amorphous Silicon Technology (Vol. 297, pp. 637-642). Publ by Materials Research Society.
Vieira, M. ; Fortunato, E. ; Lavareda, G. ; Carvalho, C. N. ; Martins, R. / Role of photodegradation on the μτ product and microstructure of the a-Si : H pin devices. Amorphous Silicon Technology. editor / Eric A. Schiff ; Malcolm J. Thompson ; Arun Madan ; Kazunobu Tanaka ; Peter G. LeComber. Vol. 297 Publ by Materials Research Society, 1993. pp. 637-642
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abstract = "PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R = I2100/I2100+I2000) as well as the hydrogen content (CH) and density of states (g(Ef)) of the active i-layer were monitored throughout the entire light induced degradation process and compared with the correspondents μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Data show a strong correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces (R increases from 0.1 to 0.4) suggesting structural changes during the light induced defects' formation. For holes, the μτ product remains approximately constant and only dependent on the initial hydrogen content. As g(Ef) increases, μτ presents an asymmetrical decrease showing that electrons are more sensitive to defects' growth than holes. We also observe that the rate of degradation is faster for samples having the lowest defect densities, R and CH, showing that the amount of degradation is not a simple function of the photon exposure (Gt product) but also depends on the material microstructure.",
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Vieira, M, Fortunato, E, Lavareda, G, Carvalho, CN & Martins, R 1993, Role of photodegradation on the μτ product and microstructure of the a-Si: H pin devices. in EA Schiff, MJ Thompson, A Madan, K Tanaka & PG LeComber (eds), Amorphous Silicon Technology. vol. 297, Publ by Materials Research Society, pp. 637-642, Proceedings of the MRS Spring Meeting, San Francisco, CA, USA, 13/04/93.

Role of photodegradation on the μτ product and microstructure of the a-Si : H pin devices. / Vieira, M.; Fortunato, E.; Lavareda, G.; Carvalho, C. N.; Martins, R.

Amorphous Silicon Technology. ed. / Eric A. Schiff; Malcolm J. Thompson; Arun Madan; Kazunobu Tanaka; Peter G. LeComber. Vol. 297 Publ by Materials Research Society, 1993. p. 637-642.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Role of photodegradation on the μτ product and microstructure of the a-Si

T2 - H pin devices

AU - Vieira, M.

AU - Fortunato, E.

AU - Lavareda, G.

AU - Carvalho, C. N.

AU - Martins, R.

PY - 1993/12/1

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N2 - PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R = I2100/I2100+I2000) as well as the hydrogen content (CH) and density of states (g(Ef)) of the active i-layer were monitored throughout the entire light induced degradation process and compared with the correspondents μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Data show a strong correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces (R increases from 0.1 to 0.4) suggesting structural changes during the light induced defects' formation. For holes, the μτ product remains approximately constant and only dependent on the initial hydrogen content. As g(Ef) increases, μτ presents an asymmetrical decrease showing that electrons are more sensitive to defects' growth than holes. We also observe that the rate of degradation is faster for samples having the lowest defect densities, R and CH, showing that the amount of degradation is not a simple function of the photon exposure (Gt product) but also depends on the material microstructure.

AB - PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R = I2100/I2100+I2000) as well as the hydrogen content (CH) and density of states (g(Ef)) of the active i-layer were monitored throughout the entire light induced degradation process and compared with the correspondents μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Data show a strong correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces (R increases from 0.1 to 0.4) suggesting structural changes during the light induced defects' formation. For holes, the μτ product remains approximately constant and only dependent on the initial hydrogen content. As g(Ef) increases, μτ presents an asymmetrical decrease showing that electrons are more sensitive to defects' growth than holes. We also observe that the rate of degradation is faster for samples having the lowest defect densities, R and CH, showing that the amount of degradation is not a simple function of the photon exposure (Gt product) but also depends on the material microstructure.

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M3 - Conference contribution

SN - 155899193X

VL - 297

SP - 637

EP - 642

BT - Amorphous Silicon Technology

A2 - Schiff, Eric A.

A2 - Thompson, Malcolm J.

A2 - Madan, Arun

A2 - Tanaka, Kazunobu

A2 - LeComber, Peter G.

PB - Publ by Materials Research Society

ER -

Vieira M, Fortunato E, Lavareda G, Carvalho CN, Martins R. Role of photodegradation on the μτ product and microstructure of the a-Si: H pin devices. In Schiff EA, Thompson MJ, Madan A, Tanaka K, LeComber PG, editors, Amorphous Silicon Technology. Vol. 297. Publ by Materials Research Society. 1993. p. 637-642