Role of photodegradation on the μτ product and microstructure of the a-Si: H pin devices

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PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R = I2100/I2100+I2000) as well as the hydrogen content (CH) and density of states (g(Ef)) of the active i-layer were monitored throughout the entire light induced degradation process and compared with the correspondents μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Data show a strong correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces (R increases from 0.1 to 0.4) suggesting structural changes during the light induced defects' formation. For holes, the μτ product remains approximately constant and only dependent on the initial hydrogen content. As g(Ef) increases, μτ presents an asymmetrical decrease showing that electrons are more sensitive to defects' growth than holes. We also observe that the rate of degradation is faster for samples having the lowest defect densities, R and CH, showing that the amount of degradation is not a simple function of the photon exposure (Gt product) but also depends on the material microstructure.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology
EditorsEric A. Schiff, Malcolm J. Thompson, Arun Madan, Kazunobu Tanaka, Peter G. LeComber
PublisherMRS - Materials Research Society
Number of pages6
ISBN (Print)155899193X
Publication statusPublished - 1 Dec 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: 13 Apr 199316 Apr 1993


ConferenceProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA


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