TY - JOUR
T1 - Role of Hydrogen Plasma on the Electrical and Optical Properties of Indium Zinc Transparent Conductive Oxide
AU - Raniero, Leandro
AU - Gonçalves, Alexandra
AU - Pimentel, Ana Cláudia Madeira Botas Gomes
AU - Zhang, S
AU - Ferreira, Isabel
AU - Vilarinho, P. M.
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2006/5/15
Y1 - 2006/5/15
N2 - In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 sccm of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.
AB - In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 sccm of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.
KW - Hydrogen Plasma Treatment
KW - Solar Cell
KW - Transparent Conducting Oxide (TCO)
U2 - 10.4028/www.scientific.net/MSF.514-516.63
DO - 10.4028/www.scientific.net/MSF.514-516.63
M3 - Article
SN - 0255-5476
VL - 514-516
SP - 63
EP - 67
JO - Materials Science Forum
JF - Materials Science Forum
ER -