Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors

Research output: Contribution to journal › Article › peer-review

Original language	Unknown
Pages (from-to)	512-518
Journal	Materials Chemistry And Physics
Volume	131
Issue number	1-2
DOIs	https://doi.org/10.1016/j.matchemphys.2011.10.013
Publication status	Published - 1 Jan 2011

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@article{0b0d8de9381f4d3483428791c994639d,

title = "Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors",

keywords = "Amorphous materials, Thin films, Oxides, Electrical characterization",

author = "Fortunato, {Elvira Maria Correia} and Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2011",

month = jan,

day = "1",

doi = "10.1016/j.matchemphys.2011.10.013",

language = "Unknown",

volume = "131",

pages = "512--518",

journal = "Materials Chemistry And Physics",

issn = "0254-0584",

publisher = "Elsevier Science Publisher B.V.",

number = "1-2",

}

TY - JOUR

T1 - Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors

AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2011/1/1

Y1 - 2011/1/1

KW - Amorphous materials

KW - Thin films

KW - Oxides

KW - Electrical characterization

U2 - 10.1016/j.matchemphys.2011.10.013

DO - 10.1016/j.matchemphys.2011.10.013

M3 - Article

SN - 0254-0584

VL - 131

SP - 512

EP - 518

JO - Materials Chemistry And Physics

JF - Materials Chemistry And Physics

IS - 1-2

ER -