Doped zinc oxide with aluminium are attractive alternative material as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO) for diffrent applications: solar cells, tft. Transparent aluminum-doped zinc oxide (AZO) thin films were deposited on glass substrates by RF magnetron sputtering at room temperature and WOW from ceramic target ZnO-Al(2)O(3) (98:2 weight percent). The structural, electrical and optical properties of these films were characterized as a function of deposition pressure. AZO films with low resistivity 2.02 x 10(-3) Phi cm and high transmittance (over 80% in vizible range) were thus prepared with a deposition pressure of 3 mTorr.
|Publication status||Published - 1 Jan 2011|