Reversible barrier switching of ZnO/RuO2 Schottky diodes

Philipp Wendel, Dominik Dietz, Jonas Deuermeier, Andreas Klein

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The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Original languageEnglish
Article number2678
Issue number10
Publication statusPublished - 20 May 2021


  • Oxygen vacancies
  • Resistive switching
  • Ruthenium oxide
  • Schottky barrier
  • Zinc oxide


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