Reversible barrier switching of ZnO/RuO2 Schottky diodes

Philipp Wendel; Dominik Dietz; Jonas Deuermeier; Andreas Klein

doi:10.3390/ma14102678

Reversible barrier switching of ZnO/RuO₂ Schottky diodes

Philipp Wendel, Dominik Dietz, Jonas Deuermeier, Andreas Klein

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Abstract

The current-voltage characteristics of ZnO/RuO₂ Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Original language	English
Article number	2678
Journal	Materials
Volume	14
Issue number	10
DOIs	https://doi.org/10.3390/ma14102678
Publication status	Published - 20 May 2021

Keywords

Oxygen vacancies
Resistive switching
Ruthenium oxide
Schottky barrier
Zinc oxide

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materials-14-02678Final published version, 375 KBLicence: CC BY

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abstract = "The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.",

keywords = "Oxygen vacancies, Resistive switching, Ruthenium oxide, Schottky barrier, Zinc oxide",

author = "Philipp Wendel and Dominik Dietz and Jonas Deuermeier and Andreas Klein",

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AU - Dietz, Dominik

AU - Deuermeier, Jonas

AU - Klein, Andreas

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N2 - The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

AB - The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

KW - Oxygen vacancies

KW - Resistive switching

KW - Ruthenium oxide

KW - Schottky barrier

KW - Zinc oxide

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JO - Materials

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Reversible barrier switching of ZnO/RuO₂ Schottky diodes

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