Abstract
The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.
Original language | English |
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Article number | 2678 |
Journal | Materials |
Volume | 14 |
Issue number | 10 |
DOIs | |
Publication status | Published - 20 May 2021 |
Keywords
- Oxygen vacancies
- Resistive switching
- Ruthenium oxide
- Schottky barrier
- Zinc oxide