@book{fa040cd564a04b9cae14aec12478434e,
title = "Resistive Random Access Memories (RRAMs) based on metal nanoparticles",
abstract = "It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena. {\textcopyright} 2011 IFIP International Federation for Information Processing.",
keywords = "Nanoparticles, non-volatile memory, resistive switching, Metal nanoparticles, Non-volatile memories, Non-volatile memory application, On/off ratio, Orders of magnitude, Planar structure, Resistive random access memory, Retention time, Silver nanoparticles, Switching properties, Innovation, Silver, Switching, Switching systems, Random access storage",
author = "A. Kiazadeh and Rocha, {Paulo R.F.} and Qian Chen and Gomes, {Henrique Leonel}",
note = "Conference code: 83942 Cited By :1 Export Date: 6 June 2017 Correspondence Address: Kiazadeh, A.; Center of Electronic, Optoelectronic and Telecommunications, Faculdade de Ci{\^e}ncias e Tecnologia, Universidade Do Algarve, 8005-139 Faro, Portugal References: Hickmott, T.W., Low-Frequency Negative Resistance in Thin Anodic Oxide Films (1962) Journal of Applied Physics, 33 (9), pp. 2669-2682; Hickmott, T.W., Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al-AlO2-Au Diodes (1965) Journal of Applied Physics, 36 (6), pp. 1885-1896; Barriac, C., Study of the electrical properties of Al-Al2O3-metal structures (1962) Physica Status Solidi A - Applied Research, 34 (2), pp. 621-633; Simmons, J.G., Verderber, R.R., New Conduction and Reversible Memory Phenomena in Thin Insulating Films (1967) Proceedings of the Royal Society of London. Series A, 301, pp. 77-102; Sutherland, R.R., Theory for Negative Resistance and Memory Effects in Thin Insulating Films and Its Application to Au-ZnS-Au Devices (1971) Journal of Physics D - Applied Physics, 4 (3), pp. 468-479; Ansari, A.A., Qadeer, A., Memory Switching in Thermally Grown Titanium-Oxide Films (1985) Journal of Physics D - Applied Physics, 18 (5), pp. 911-917; Ma, L.P., Liu, J., Pyo, S., Xu, Q.F., Yang, Y., Nonvolatile electrical bistability of organic/metal-nanocluster/organic system (2003) Applied Physics Letters, 82 (9), pp. 1419-1421; Paul, S., Pearson, C., Molloy, A., Cousins, M.A., Green, M., Kolliopoulou, S., Dimitrakis, P., Petty, M.C., Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures (2003) Nano Letters, 3 (4), pp. 533-536; Silva, H., Gomes, H.L., Pogorelov, Y.G., Stallinga, P., De Leeuw, D.M., Araujo, J.P., Sousa, J.B., Freitas, P.P., Resistive switching in nanostructured thin films (2009) Applied Physics Letters, 94, pp. 1-3",
year = "2011",
doi = "10.1007/978-3-642-19170-1_65",
language = "English",
isbn = "18684238 (ISSN); 9783642191695 (ISBN)",
volume = "349 AICT",
publisher = "IFIP Advances in Information and Communication Technology",
}