Resistive Random Access Memories (RRAMs) based on metal nanoparticles

A. Kiazadeh, Paulo R.F. Rocha, Qian Chen, Henrique Leonel Gomes

Research output: Book/ReportBook

1 Citation (Scopus)

Abstract

It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena. © 2011 IFIP International Federation for Information Processing.
Original languageEnglish
Place of PublicationCosta de Caparica
PublisherIFIP Advances in Information and Communication Technology
Number of pages5
Volume349 AICT
ISBN (Print)18684238 (ISSN); 9783642191695 (ISBN)
DOIs
Publication statusPublished - 2011

Keywords

  • Nanoparticles
  • non-volatile memory
  • resistive switching
  • Metal nanoparticles
  • Non-volatile memories
  • Non-volatile memory application
  • On/off ratio
  • Orders of magnitude
  • Planar structure
  • Resistive random access memory
  • Retention time
  • Silver nanoparticles
  • Switching properties
  • Innovation
  • Silver
  • Switching
  • Switching systems
  • Random access storage

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