TY - JOUR
T1 - Recent advances in ZnO transparent thin film transistors
AU - Fortunato, Elvira Maria Correia
AU - Barquinha, Pedro Miguel Cândido
AU - Pimentel, Ana Cláudia Madeira Botas Gomes
AU - Gonçalves, Alexandra
AU - Marques, António
AU - Pereira, Luis Miguel Nunes
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2005/9/1
Y1 - 2005/9/1
N2 - Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room temperature, in the crystalline form), which has many applications, such as for transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers and UV detectors. More recently, it is attracting considerable attention for its possible application to thin film transistors. In this paper, we present some of the recent results already obtained as well as the ones that are being developed in our laboratory. The main advantage presented by these new thin film transistors is the combination of high channel mobility and transparency produced at room temperature which makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.
AB - Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room temperature, in the crystalline form), which has many applications, such as for transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers and UV detectors. More recently, it is attracting considerable attention for its possible application to thin film transistors. In this paper, we present some of the recent results already obtained as well as the ones that are being developed in our laboratory. The main advantage presented by these new thin film transistors is the combination of high channel mobility and transparency produced at room temperature which makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.
KW - Zinc oxide
KW - Thin film transistors
KW - rf Magnetron sputtering
UR - http://www.scopus.com/inward/record.url?scp=22944469098&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2005.01.066
DO - 10.1016/j.tsf.2005.01.066
M3 - Article
SN - 0040-6090
VL - 487
SP - 205
EP - 211
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications
Y2 - 5 September 2004 through 10 September 2004
ER -