Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors

Tobias Cramer, Allegra Sacchetti, Maria Teresa Lobato, Pedro Barquinha, Vincent Fischer, Mohamed Benwadih, Jacqueline Bablet, Elvira Fortunato, Rodrigo Martins, Beatrice Fraboni

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm2 V−1 s−1 even after exposure to doses of 410 krad(SiO2), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation.

Original languageEnglish
Article number1500489
JournalAdvanced Electronic Materials
Volume2
Issue number7
DOIs
Publication statusPublished - 1 Jul 2016

Keywords

  • flexible electronics
  • ionizing radiation
  • organic semiconductors
  • radiation damage
  • semiconducting oxides

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