TY - JOUR
T1 - Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
AU - Cramer, Tobias
AU - Sacchetti, Allegra
AU - Lobato, Maria Teresa
AU - Barquinha, Pedro
AU - Fischer, Vincent
AU - Benwadih, Mohamed
AU - Bablet, Jacqueline
AU - Fortunato, Elvira
AU - Martins, Rodrigo
AU - Fraboni, Beatrice
N1 - Sem PDF.
EU (611070)
FEDER funds through the COMPETE Programme
National Funds through FCT - Portuguese Foundation for Science and Technology (UID/CTM/50025/2013; EXCL/CTM-NAN/0201/2012)
PY - 2016/7/1
Y1 - 2016/7/1
N2 - Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm2 V−1 s−1 even after exposure to doses of 410 krad(SiO2), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation.
AB - Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm2 V−1 s−1 even after exposure to doses of 410 krad(SiO2), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation.
KW - flexible electronics
KW - ionizing radiation
KW - organic semiconductors
KW - radiation damage
KW - semiconducting oxides
UR - http://www.scopus.com/inward/record.url?scp=84978384040&partnerID=8YFLogxK
U2 - 10.1002/aelm.201500489
DO - 10.1002/aelm.201500489
M3 - Article
AN - SCOPUS:84978384040
VL - 2
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 7
M1 - 1500489
ER -