Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

M. N. Drozdov, Y. N. Drozdov, A. Csik, A. V. Novikov, K. Vad, P. A. Yunin, D. V. Yurasov, S. F. Belykh, G. P. Gololobov, D. V. Suvorov, A. Tolstogouzov

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