Prospects for microwave plasma synthesized N-graphene in secondary electron emission mitigation applications

Neli Bundaleska, Ana M. Dias, Nenad Bundaleski, E. Felizardo, J. Henriques, D. Tsyganov, Miroslav V. Abrashev, Evgenia P. Valcheva, J. Kissovski, A. M. Ferraria, A. M. Botelho do Rego, A. Almeida, Janez Zavašnik, Uroš Cvelbar, Orlando M. N. D. Teodoro, Thomas Strunskus, Elena Tatarova

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7 Citations (Scopus)


The ability to change the secondary electron emission properties of nitrogen-doped graphene (N-graphene) has been demonstrated. To this end, a novel microwave plasma-enabled scalable route for continuous and controllable fabrication of free-standing N-graphene sheets was developed. High-quality N-graphene with prescribed structural qualities was produced at a rate of 0.5 mg/min by tailoring the high energy density plasma environment. Up to 8% of nitrogen doping levels were achieved while keeping the oxygen content at residual amounts ( 1%). The synthesis is accomplished via a single step, at atmospheric conditions, using ethanol/methane and ammonia/methylamine as carbon and nitrogen precursors. The type and level of doping is affected by the position where the N-precursor is injected in the plasma environment and by the type of precursors used. Importantly, N atoms incorporated predominantly in pyridinic/pyrrolic functional groups alter the performance of the collective electronic oscillations, i.e. plasmons, of graphene. For the first time it has been demonstrated that the synergistic effect between the electronic structure changes and the reduction of graphene $-plasmons caused by N doping, along with the peculiar “crumpled” morphology, leads to sub-unitary (textless 1) secondary electron yields. N-graphene can be considered as a prospective low secondary electron emission and plasmonic material.
Original languageEnglish
Article number13013
Number of pages13
JournalScientific Reports
Issue number1
Publication statusPublished - 1 Dec 2020


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