Properties of a-Si : H intrinsic films produced by HWPA-CVD technique

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In this paper, we investigate the optoelectronic properties and the photodegradation of amorphous silicon films produced by the hot wire plasma assisted technique (HWPA-CVD). We observed that hydrogen dilution in the gas phase plays an important role in the time dependence of the photoconductivity, which is correlated with an enhancement of defect density. We also compare the degradation of these films with those produced by plasma enhanced and by hot wire chemical vapour deposition techniques (PECVD and HW-CVD) and we found lower time dependence for the photodegradation of the films produced by HWPA-CVD technique.
Original languageEnglish
Pages (from-to)366-369
Number of pages4
JournalThin Solid Films
Issue numberNA
Publication statusPublished - 22 Mar 2004


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