Production of N-graphene by microwave N2-Ar plasma

A. Dias, Nenad Bundaleski, E. Tatarova, Fernando Morgado-Dias, M. Abrashev, U. Cvelbar, O. M N D Teodoro, J. Henriques

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Self-standing N-graphene sheets were produced in low-pressure microwave N2-Ar plasma. The graphene sheets were exposed to the plasma for various durations and doped with nitrogen atoms, which were incorporated into the hexagonal carbon lattice in pyridinic, pyrrolic and quaternary functional groups, mainly. Atomic nitrogen emissions at the substrate position in the plasma were detected using optical emission spectroscopy. Raman spectroscopy, x-ray photoelectron spectroscopy and transmission electron microscopy techniques were also applied for material characterization. Doping levels as high as 5.6% were achieved and an increase in the sp2/sp3 ratio was observed for a relatively short exposure time.

Original languageEnglish
Article number055307
JournalJournal Of Physics D-Applied Physics
Volume49
Issue number5
DOIs
Publication statusPublished - 7 Jan 2016

Keywords

  • microwave plasma
  • N-graphene
  • nitrogen atoms

Fingerprint Dive into the research topics of 'Production of N-graphene by microwave N<sub>2</sub>-Ar plasma'. Together they form a unique fingerprint.

  • Cite this