Process for using and producing paper based on natural cellulose fibers, synthetic fibers or mixed fibers as physical support and storing medium for electrical charges in self-sustaining field-effect transistors with memory using active semiconductor oxides

Embodiments of the present disclosure provide for the use and creation of materials based on natural cellulose fibres, synthetic fibres, or mixed fibres as physical Support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semi-conductors (1) for the manufacture of the Channel regions that is deposited on the fibres of the paper material (2)as well as metals or passive semiconductors for the manufacture of drain and source (5), allowing the interconnection of fiber, in addition to the gate electrode (3) existing on the other side of the paper, respectively,p or n type, in monolithic or hybrid forms.