TY - PAT
T1 - Process for using and producing paper based on natural cellulose fibers, synthetic fibers or mixed fibers as physical support and storing medium for electrical charges in self-sustaining field-effect transistors with memory using active semiconductor
AU - Martins, Rodrigo Ferrão De Paiva
AU - Fortunato, Elvira Maria Correia
AU - Pereira, Luis Miguel Nunes
AU - Barquinha, Pedro Miguel Cândido
AU - Correia, Nuno Filipe de Oliveira
PY - 2009/9/24
Y1 - 2009/9/24
N2 - The present invention consists in the use and production of materials based on natural cellulose fibers, synthetic fibers, or mixed fibers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibers of the material as well as metals or passive semiconductors for the manufacture of drain and source, allowing interconnection between the fibers, in addition to the respective p or n type gate electrode contact existing on the other side of the paper, in monolithic or hybrid forms.
AB - The present invention consists in the use and production of materials based on natural cellulose fibers, synthetic fibers, or mixed fibers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibers of the material as well as metals or passive semiconductors for the manufacture of drain and source, allowing interconnection between the fibers, in addition to the respective p or n type gate electrode contact existing on the other side of the paper, in monolithic or hybrid forms.
M3 - International PCT application
M1 - WO2009115913
Y2 - 2009/03/20
ER -