Procedure for the use of natural cellulosic material, synthetic material or mixed natural and synthetic material, simultaneously as physical and dielectric support in self-sustainable field effect electronic and optoelectronic devices

The present invention refers to the use and creation of natural cellulosic material, synthetic or mixed material and corresponding production process to be used simultaneously as physical and dielectric support in the creation of new field-effect electronic or optoelectronic devices, designated C-MOS structured electronic devices, designated interstrate, wherein its functionality depends on the capacity per unit area of the paper depending on how the fibers thereof are distributed, the fibers being coated by an active ionic or covalent semiconductor and allowing the production of flexible self-sustainable devices, disposable devices, based on the new integrated interstrate concept, of monolithic or hybrid types.