TY - PAT
T1 - Procedure for the use of natural cellulosic material, synthetic material or mixed natural and synthetic material, simultaneously as physical and dielectric support in self-sustainable field effect electronic and optoelectronic devices
AU - Martins, Rodrigo Ferrao De Paiva
AU - Fortunato, Elvira Maria Correia
PY - 2011/1/12
Y1 - 2011/1/12
N2 - Embodiments of the present disclosure provide for the use and creation of natural cellulosic material, synthetic or mixed fibers hereafter designated as paper and the corresponding production process to be used simultaneously as physical and dielectric support in the creation of new field effect electronic or optoelectronic devices, called C- MOS structured electronic devices, whose paper electronic is now on called interstrate in which its functionality depends on the electrical charge capacity per unit area of the paper to accumulate electronic and ionic charges, function of how the forming fibers are distribute and compacted along the paper surface and thickness, as well as how the upmost surface close fibers are coated by an active ionic or covalent semiconductor and allowing the production of flexible self sustained devices, disposable devices, based on the new interstrate integrated concept, of monolithic or hybrid types.
AB - Embodiments of the present disclosure provide for the use and creation of natural cellulosic material, synthetic or mixed fibers hereafter designated as paper and the corresponding production process to be used simultaneously as physical and dielectric support in the creation of new field effect electronic or optoelectronic devices, called C- MOS structured electronic devices, whose paper electronic is now on called interstrate in which its functionality depends on the electrical charge capacity per unit area of the paper to accumulate electronic and ionic charges, function of how the forming fibers are distribute and compacted along the paper surface and thickness, as well as how the upmost surface close fibers are coated by an active ionic or covalent semiconductor and allowing the production of flexible self sustained devices, disposable devices, based on the new interstrate integrated concept, of monolithic or hybrid types.
M3 - Regional/Other National Application
M1 - EP2272114
Y2 - 2010/09/23
ER -