Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectric

Engineering & Materials Science

• Aging of materials 20%
• Aluminum oxide 25%
• Annealing 25%
• Chemical properties 29%
• Costs 9%
• Current density 25%
• Dielectric films 38%
• Electric properties 27%
• Electronic equipment 44%
• Hot Temperature 12%
• Indium 33%
• Leakage currents 28%
• Metals 50%
• Oxide films 96%
• Oxides 67%
• Permittivity 26%
• Printing 50%
• Temperature 20%
• Thin film transistors 100%
• Throughput 18%
• Transistors 22%
• Wavelength 22%

Chemistry

• Annealing 20%
• Application 16%
• Compound Mobility 19%
• Dielectric Constant 23%
• Dielectric Film 38%
• Dielectric Material 69%
• Electrical Property 21%
• Leakage Current 34%
• Metal Oxide 65%
• Oxide 42%