TY - JOUR
T1 - Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectric
AU - Carlos, Emanuel
AU - Leppäniemi, Jaakko
AU - Sneck, Asko
AU - Alastalo, Ari
AU - Deuermeier, Jonas
AU - Branquinho, Rita
AU - Martins, Rodrigo
AU - Fortunato, Elvira
N1 - info:eu-repo/grantAgreement/EC/H2020/685758/EU#
info:eu-repo/grantAgreement/EC/H2020/692373/EU#
info:eu-repo/grantAgreement/EC/H2020/817161/EU#
FCT/MCTES. Grant Number: SFRH/BD/116047/2016
FCT-Portuguese Foundation for Science and Technology, Reference UID/CTM/50025/2019 and FCT/MCTES.
IDS-FunMat-INNO project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015.
NeurOxide. Grant Number: PTDC/NAN‐MAT/30812/2017.
Authors would like to acknowledge J. V. Pinto for XRR, A. Pimentel for TG-DSC, and T. Calmeiro for AFM measurements. Liam Gillan and P. Hakkarainen are acknowledged for their technical assistance. Toyobo Co., Ltd. is gratefully acknowledged for the xenomax polyimide substrates.
PY - 2020/3/1
Y1 - 2020/3/1
N2 - Lately, printed oxide electronics have advanced in the performance and low-temperature solution processability that are required for the dawn of low-cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra-thin high-κ aluminum-oxide dielectric with a high-throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low-temperature processing (≤200 °C). Thermal annealing is combined with low-wavelength far-ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high-κ dielectric exhibits a very low leakage-current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.
AB - Lately, printed oxide electronics have advanced in the performance and low-temperature solution processability that are required for the dawn of low-cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra-thin high-κ aluminum-oxide dielectric with a high-throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low-temperature processing (≤200 °C). Thermal annealing is combined with low-wavelength far-ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high-κ dielectric exhibits a very low leakage-current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.
KW - flexographic printing
KW - high-κ oxide dielectrics
KW - inkjet printing
KW - oxide thin-film transistors
KW - roll-to-roll compatibility
UR - http://www.scopus.com/inward/record.url?scp=85078661524&partnerID=8YFLogxK
U2 - 10.1002/aelm.201901071
DO - 10.1002/aelm.201901071
M3 - Article
AN - SCOPUS:85078661524
SN - 2199-160X
VL - 6
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 3
M1 - 1901071
ER -